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ANNA UNIVERSITY 1ST,3RD,5TH,7TH SEMESTER SYLLABUS 2008 REGULATION

EC2023 SOLID STATE ELECTRONIC DEVICES



EC2023 SOLID STATE ELECTRONIC DEVICES SYLLABUS L T P C

3 0 0 3

UNIT I CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS 9

Semiconductor materials - Periodic Structures - Crystal Lattices - Cubic lattices - Planes

and Directions - Diamond lattice - Bulk Crystal Growth - Starting Materials - Growth of

Single Crystal lngots - Wafers - Doping - Epitaxial Growth - Lattice Matching in Epitaxial

Growth - Vapor - Phase Epitaxy - Atoms and Electrons - Introduction to Physical Models

- Experimental Observations - Photoelectric Effect - Atomic spectra - Bohr model -

Quantum Mechanics - Probability and Uncertainty Principle - Schrodinger Wave

Equation - Potential Well Equation - Potential well Problem - Tunneling.

UNIT II ENERGY BANDS AND CHARGE CARRIERS IN

SEMICONDUCTORS AND JUNCTIONS 9

Energy bands in Solids, Energy Bands in Metals, Semiconductors, and Insulators -

Direct and Indirect Semiconductors - Variation of Energy Bands with Alloy Composition -

36

Charge Carriers in Semiconductors - Electrons and Holes - Electrons and Holes in

Quantum Wells - Carrier Concentrations - Fermi Level - Electron and Hole

Concentrations at Equilibrium - Temperature Dependence of Carrier Concentrations -

Compensation and Space Charge Neutrality - Drift of Carrier in Electric and Magnetic

Fields conductivity and Mobility - Drift and Resistance - Effects of Temperature and

Doping on Mobility - High field effects - Hall Effect - invariance of Fermi level at

equilibrium - Fabrication of p-n junctions, Metal semiconductor junctions.

UNIT III METAL OXIDE SEMICONDUCTOR FET 9

GaAS MESFET - High Electron Mobility Transistor - Short channel Effects - Metal

Insulator Semiconductor FET - Basic Operation and Fabrication - Effects of Real

Surfaces - Threshold Voltage - MOS capacitance Measurements - current - Voltage

Characteristics of MOS Gate Oxides - MOS Field Effect Transistor - Output

characteristics - Transfer characteristics - Short channel MOSFET V-I characteristics -

Control of Threshold Voltage - Substrate Bias Effects - Sub threshold characteristics -

Equivalent Circuit for MOSFET - MOSFET Scaling and Hot Electron Effects - Drain -

Induced Barrier Lowering - short channel and Narrow Width Effect - Gate Induced Drain

Leakage.

UNIT IV OPTOELCTRONIC DEVICES 9

Photodiodes - Current and Voltage in illuminated Junction - Solar Cells - Photo detectors

- Noise and Bandwidth of Photo detectors - Light Emitting Diodes - Light Emitting

Materials - Fiber Optic Communications Multilayer Heterojunctions for LEDs - Lasers -

Semiconductor lasers - Population Inversion at a Junction Emission Spectra for p-n

junction - Basic Semiconductor lasers - Materials for Semiconductor lasers.

UNIT V HIGH FREQUENSY AND HIGH POWER DEVICES 9

Tunnel Diodes, IMPATT Diode, operation of TRAPATT and BARITT Diodes, Gunn

Diode - transferred - electron mechanism, formation and drift of space charge domains,

p-n-p-n Diode, Semiconductor Controlled Rectifier, Insulated Gate Bipolar Transistor.

TOTAL= 45 PERIODS

TEXT BOOK

1. Ben. G. Streetman & Sanjan Banerjee, Solid State Electronic Devices, 5th Edition,

PHI, 2003.

REFERENCES

1. Donald A. Neaman, Semiconductor Physics and Devices, 3rd Edition, TMH, 2002.

2. Yannis Tsividis, Operation & Mode line of MOS Transistor, 2nd Edition, Oxford

University Press, 1999.

3. Nandita Das Gupta & Aamitava Das Gupta, Semiconductor Devices Modeling a

Technology, PHI, 2004.

4. D.K. Bhattacharya & Rajinish Sharma, Solid State Electronic Devices, Oxford

University Press, 2007.

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